Surfactant-mediated growth of semiconductor materials

Surfactant-mediated growth revisited.

The x-ray structure analysis of the oxygen-surfactant-mediated growth of Ni on Cu(001) identifies up to 0.15 monolayers of oxygen in subsurface octahedral sites. This questions the validity of the general view that surfactant oxygen floats on top of the growing Ni film. Rather, the surfactant action is ascribed to an oxygen-enriched zone extending over the two topmost layers. Surface stress mea...

Surfactant-mediated growth of giant magnetoresistance multilayers

A series of experiments have been conducted to evaluate the magnetotransport properties of rf-diode-sputterdeposited giant magnetoresistive multilayers with either copper or copper-silver-gold nonferromagnetic ~NFM! conducting layers. The study revealed that rf-diode-deposited multilayers utilizing Cu80Ag15Au5 as the NFM conducting layer possess significantly superior giant magnetoresistance to...

Surfactant-mediated growth of nonequilibrium interfaces.

A number of recent experiments have showed that surfactants can modify the growth mode of an epitaxial film, suppressing islanding and promoting layer-by-layer growth. Here I introduce a set of coupled equations to describe the nonequilibrium roughening of an interface covered with a thin surfactant layer. The surfactant may drive the system into a novel phase, in which the surface roughness is...

The surfactant effect in semiconductor thin film growth

Surfactant-Mediated Surface Growth: Nonequilibrium Theory

A number of recent experiments have showed that surfactants can modify the growth mode of an epitaxial film, suppressing islanding and promoting layer-by-layer growth. Here a set of coupled equations are introduced to describe the coupling between a growing interface and a thin surfactant layer deposited on the top of the nonequilibrium surface . The equations are derived using the main experim...